発表者名 |
佐藤 陽紀 |
指導教員名 |
長谷川 達生 教授 |
発表題目(英語) |
Devlopment of organic FeFETs exhibiting highly-sharp swithching transistor operation |
要旨(英語) |
Ferroelectric field-effect transistors (FeFETs) use ferroelectric materials as gate insulators, enabling low-energy, non-volatile devices. Several organic FeFETs based on organic semiconductors (OSCs) have been reported, but it is difficult to confirm their effectiveness, as many devices exhibit large subthreshold swing (SS) values, significant hysteresis, and high operating voltages. Recently, a novel approach has enabled the formation of extremely clean semiconductor interfaces by employing highly layered crystalline OSCs on highly lyophobic insulating layer surfaces, resulting in practical device performance with exceptionally sharp and stable switching at low voltages. In this study, I aim to develop high-performance organic FeFETs that leverage these sharp-switching characteristics. I will present the fabrication and characterization of thin films of the polymer ferroelectric PVDF-TrFE and report on FeFETs incorporating a hybrid gate insulating layer of lyophobic polymer and the ferroelectric PVDF-TrFE layer. |
発表言語 |
日本語 |